VS-MBR20100CT-1PBF Ver la hoja de datos (PDF) - Vishay Semiconductors

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Fabricante

VS-MBR20100CT-1PBF

Schottky Rectifier, 2 x 10 A

Vishay Semiconductors 

VS-MBRB20...CTPbF, VS-MBR20...CT-1PbF Series

Vishay High Power Products Schottky Rectifier, 2 x 10 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

VFM (1)

Maximum instantaneous

reverse current

IRM (1)

Threshold voltage

Forward slope resistance

Maximum junction capacitance

Typical series inductance

Maximum voltage rate of change

VF(TO)

rt

CT

LS

dV/dt

Note

(1) Pulse width < 300 μs, duty cycle < 2 %

10 A

20 A

10 A

20 A

TJ = 25 °C

TJ = 125 °C

TEST CONDITIONS

TJ = 25 °C

TJ = 125 °C

Rated DC voltage

TJ = TJ maximum

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C

Measured from top of terminal to mounting plane

Rated VR

VALUES

0.80

0.95

0.70

0.85

0.10

6

0.433

15.8

400

8.0

10 000

UNITS

V

mA

V

mΩ

pF

nH

V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction temperature range

TJ

Maximum storage temperature range

Maximum thermal resistance,

junction to case per leg

TStg

RthJC

DC operation

Typical thermal resistance,

case to heatsink

RthCS

Mounting surface, smooth and greased

Maximum thermal resistance,

junction to ambient

RthJA

DC operation

Approximate weight

Mounting torque

Marking device

minimum

maximum

Non-lubricated threads

Case style D2PAK

Case style TO-262

VALUES

- 65 to 150

- 65 to 175

2.0

UNITS

°C

0.50

°C/W

50

2

g

0.07

oz.

6 (5)

12 (10)

kgf · cm

(lbf · in)

MBRB20100CT

MBR20100CT-1

www.vishay.com

2

For technical questions, contact: diodestech@vishay.com

Document Number: 94306

Revision: 16-Mar-10

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