MBR3090CTR Ver la hoja de datos (PDF) - Thinki Semiconductor Co., Ltd.

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Fabricante

MBR3090CTR

30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers

Thinki Semiconductor Co., Ltd. 

MBR3035CTR thru MBR30200CTR

®

Pb Free Plating Product

Pb

MBR3035CTR thru MBR30200CTR

30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers

Features

Standard MBR matured technology with high reliablity

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters/Solar Inverters

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

Case: Heatsink TO-220AB open type

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202 method 208

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.0 gram approximately

TO-220AB

.419(10.66)

.387(9.85)

.139(3.55)

MIN

Unit : inch (mm)

.196(5.00)

.163(4.16)

.054(1.39)

.045(1.15)

.038(0.96)

.019(0.50)

.1(2.54)

.1(2.54)

.025(0.65)MAX

Case

Case

Case

Case

Positive

Negative

Doubler

Series

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "CT"

Suffix "CTR"

Suffix "CTD" Suffix "CTS"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)

MBR MBR MBR MBR MBR MBR MBR MBR

PARAMETER

SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 UNIT

CTR CTR CTR CTR CTR CTR CTR CTR

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

VRRM

35

45

50

60

90 100 150 200

V

VRMS

24

31

35

42

63

70 105 140

V

VDC

35

45

50

60

90 100 150 200

V

IF(AV)

30

A

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

IFRM

30

A

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

Peak repetitive reverse surge current (Note 1)

Maximum instantaneous forward voltage (Note 2)

IF=15A, TJ=25℃

IF=15A, TJ=125℃

IF=30A, TJ=25℃

IF=30A, TJ=125℃

Maximum reverse current @ rated VR TJ=25 ℃

TJ=125 ℃

Voltage rate of change (Rated VR)

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

IFSM

IRRM

VF

IR

dV/dt

RθJC

TJ

TSTG

1

0.70

0.60

0.82

0.73

20

200

0.5

0.75

0.84

0.95

0.65

0.70

0.80

0.90

0.94

1.05

0.78

0.82

0.92

0.2

15

10

10000

1.5

- 55 to +150

- 55 to +150

A

A

V

mA

V/μs

℃/W

℃

℃

Rev.07C

© 2006 Thinki Semiconductor Co., Ltd.

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