2SC3357 Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Número de pieza

componentes Descripción

Fabricante

2SC3357

Silicon NPN transistor in a SOT-89 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SC3357

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

*:mounted on 16cm2×7mm ceramic substrate.

*:置于 16cm2×7mm 的陶瓷板上。

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

*PC

Tj

Tstg

电性能参数 / Electrical Characteristics(Ta=25℃)

数值

Rating

20

12

3.0

100

350

1.2

150

-55～150

单位

Unit

V

V

V

mA

mW

W

℃

℃

参数

Parameter

Collector Cut-Off Current

Emitter Base Cut-Off Current

DC Current Gain

Transition Frequency

Feed-Back Capacitance

Noise Figure

符号

Symbol

测试条件

Test Conditions

ICBO VCB=10V IE=0

IEBO VEB=1.0V IC=0

hFE VCE=10V IC=20mA

fT

Cre

NF(1)

NF(2)

VCE=10V

VCB=10V

f=1.0MHz

VCE=10V

f=1.0GHz

VCE=10V

f=1.0GHz

IC=20mA

IE=0

IC=7.0mA

IC=40mA

最小值 典型值 最大值 单位

Min Typ Max Unit

1.0 μA

1.0 μA

50 120 300

6.5

GHz

0.65 1.0 pF

1.1

dB

1.8 3.0 dB

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