2N5759 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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componentes Descripción

Fabricante

2N5759

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 120V(Min.)

·DC Current Gain-hFE= 20(Min.)@IC = 3A

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.0V(Max)@ IC = 3A

APPLICATIONS

·Designed for use in high power audio amplifier applications

and high voltage switching regulator circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

6

A

ICM

Collector Current-Peak

10

A

IB

Base Current

4

A

PC

Collector Power Dissipation@TC=25℃ 150

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX

1.17

UNIT

℃/W

SPTECH website：www.superic-tech.com

2N5759

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