2N5599 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

2N5599

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

DESCRIPTION

·DC Current Gain-

: hFE= 30-90@IC= -1A

·Wide Area of Safe Operation

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -80V(Min)

·Complement to Type 2N5600

APPLICATIONS

·Designed for use in high frequency power amplifiers, audio

power amplifier and drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-2

A

PC

Collector Power Dissipation@TC=25℃

20

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

4.37 ℃/W

SPTECH website：www.superic-tech.com

2N5599

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