2N4232A Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

2N4232A

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2N4232A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=100mA; IB= 0

ICEO

Collector Cutoff Current

VCE=50V;IB= 0

ICEX

Collector-Emitter Leakage current

VCE=60V,VBE(OFF)=1.5V

ICBO

Collector Cutoff Current

VCE=60V;IB= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A

VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A

VCE(sat)-3* Collector-Emitter Saturation Voltage IC= 5A; IB=1.25A

VBE(ON)* Base-Emitter On Voltage

IC=1.5A;VCE= 2V

hFE-1*

DC Current Gain

IC= 0.5A; VCE= 2V

hFE-2*

DC Current Gain

IC= 1.5A; VCE= 2V

hFE-3*

DC Current Gain

IC= 3A; VCE= 2V

hFE-4*

DC Current Gain

*:Pulse test:Pulse width=300us,duty cycle≤2%

IC= 5A; VCE= 4V

MIN MAX UNIT

60

V

1

mA

0.1 mA

50

uA

0.5 mA

0.7

V

2.0

V

4

V

1.4

V

40

25 100

10

4

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