2N3714 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2N3714

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2N3714

DESCRIPTION

·Excellent Safe Operating Area

·Low Collector-Emitter Saturation Voltage

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device performance

and reliable operation.

APPLICATIONS

·Designed for medium-speed switching and

amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

10

A

PC

Collector Power Dissipation@TC=25℃ 150

W

TJ

Junction Temperature

-65~200 ℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

1.17 ℃/W

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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