2N3799X Ver la hoja de datos (PDF) - TT Electronics.

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Fabricante

2N3799X

SILICON PLANAR EPITAXIAL PNP TRANSISTOR

TT Electronics. 

SILICON PLANAR EPITAXIAL

PNP TRANSISTOR

2N3799X

• Low Noise

• Hermetic TO-18 Metal package.

• Ideally suited for Low Level Amplifier.

Instrumentation Amplifiers and General Purpose Applications

• Screening Options Available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

VCBO

Collector – Base Voltage

-60V

VCEO

Collector – Emitter Voltage

-50V

VEBO

Emitter – Base Voltage

-5V

IC

Continuous Collector Current

-50mA

PD

Total Power Dissipation at TA = 25°C

360mW

Derate Above 25°C

2.06mW/°C

PD

Total Power Dissipation at TC = 25°C

1.2W

Derate Above 25°C

6.86mW/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES

Symbols Parameters

RθJA

Thermal Resistance, Junction To Ambient

RθJC

Thermal Resistance, Junction To Case

Min.

Typ.

Max. Units

486.11 °C/W

145.83 °C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 8240

Website: http://www.semelab-tt.com

Issue 2

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