2N6765 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N6765 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2N6765
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 16A
IGSS
Gate Source Leakage Current
VGS= 20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 150V; VGS= 0
VSD
Diode Forward Voltage
IF= 25A; VGS= 0
MIN MAX UNIT
150
V
2
4
V
0.12
Ω
100
nA
1
mA
1.7
V
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