2N6782LCC4(1999) Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc
Número de pieza
componentes Descripción
Fabricante
2N6782LCC4 Datasheet PDF : 2 Pages
| |||
2N6782LCC4
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ.
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
Static Drain – Source On–State
RDS(on) Resistance 1
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance 1
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
VGS = 10V
VDS = VGS
VDS ³ 15V
VGS = 0
VGS = 20V
VGS = –20V
ID = 2A
ID = 3.1A
ID = 250mA
IDS = 2A
VDS = 0.8BVDSS
TJ = 125°C
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 3.1A
VDS = 0.5BVDSS
VDD = 50V
ID = 3.1A
RG = 7.5W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current 2
VSD Diode Forward Voltage 1
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge 1
ton
Forward Turn–On Time
THERMAL CHARACTERISTICS
IS = 3.1A
TJ = 25°C
VGS = 0
IF = 7.4A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
100
0.10
2
0.8
180
82
15
4.1
0.4
1.4
Negligible
RqJC Thermal Resistance Junction – Case
RqJPC Thermal Resistance Junction – PC Board
Max.
0.6
0.69
4
25
250
100
–100
6.5
1.6
3.5
15
25
25
20
3.1
12
1.5
180
2.0
11
27
Unit
V
V/°C
W
V
S (É)
mA
nA
pF
nC
ns
A
V
ns
mC
°C/W
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
10/99
Share Link: 