2N5301 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N5301 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5301 2N5302 2N5303
DESCRIPTION
·With TO-3 package
·Complement to type 2N4398/4399/5745
·Low collector/saturation voltage
·Excellent safe operating area
APPLICATIONS
·For use in power amplifier and switching
circuits applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
2N5301
VCBO
Collector-base voltage 2N5302
2N5303
2N5301
VCEO
Collector-emitter voltage 2N5302
2N5303
VEBO
Emitter-base voltage
IC
Collector current
2N5301/5302
2N5303
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
40
60
80
40
60
80
5
30
20
7.5
200
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W
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