2N6298 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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2N6298

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

Product Specification

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6298

2N6299

IC=0.1A ; IB=0

VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=16mA

VCEsat-2

VBEsat

VBE

ICEX

ICEO

IEBO

hFE-1

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base -emitter on voltage

Collector cut-off current

2N6298

2N6299

Collector cut-off current

2N6298

2N6299

Emitter cut-off current

DC current gain

IC=8A; IB=80mA

IC=8A; IB=80mA

IC=4A ; VCE=3V

VCE=60V; VBE(off)=1.5V

TC=150℃

VCE=80V; VBE(off)=1.5V

TC=150℃

VCE=30V; IB=0

VCE=40V; IB=0

VEB=5V; IC=0

IC=4A ; VCE=3V

hFE-2

DC current gain

IC=8A ; VCE=3V

COB

Output capacitance

IE=0 ; VCB=10V;f=0.1MHz

www.jmnic.com

2N6298 2N6299

MIN TYP. MAX UNIT

60

V

80

2.0

V

3.0

V

4.0

V

2.8

V

0.5

5.0

mA

0.5

5.0

0.5

mA

2.0

mA

750

18000

100

300

pF

JMnic

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