2N6420 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

2N6420

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A

VBE(on) Base-Emitter On Voltage

IC= -1A ; VCE= -10V

ICEO

Collector Cutoff Current

VCE= -150V; IB= 0

IEBO

Emitter Cutoff Current

VEB= -6V; IC= 0

hFE-1

DC Current Gain

IC= -0.1A ; VCE= -10V

hFE-2

DC Current Gain

IC= -0.5A ; VCE= -10V

hFE-3

DC Current Gain

IC= -1A ; VCE= -10V

2N6420

MIN MAX UNIT

-175

V

-5.0

V

-1.4

V

-10

mA

-5.0

mA

40

40

200

10

SPTECH website：www.superic-tech.com

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