2N4911 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N4911 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2N4911
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
60
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
0.6 V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
1.3 V
VBE(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 1A ; VCE= 1V
VCE= 60V;VBE(off)= 1.5V
VCE= 60V;VBE(off)= 1.5V;TC=150℃
VCE=30V; IB= 0
1.3 V
0.1
1.0
mA
0.5 mA
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0 mA
hFE-1
DC Current Gain
IC= 50mA ; VCE= 1V
40
hFE-2
DC Current Gain
IC= 500mA ; VCE= 1V
20
100
hFE-3
DC Current Gain
IC= 1A ; VCE= 1V
10
fT
Current-Gain—Bandwidth Product IC= 0.25A; VCE= 10V, ftest= 1MHz
3
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 100kHz
100 pF
SPTECH website：www.superic-tech.com
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