2N5157 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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componentes Descripción

Fabricante

2N5157

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0

V(BR)CER Collector-Emitter Breakdown Voltage ICM= 3.5A ; RBE= 10Ω

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.7A

VBE(sat) Base-Emitter Saturation Voltage

ICEV

Collector Cutoff Current

ICEO

Collector Cutoff Current

IC= 3.5A; IB= 0.7A

VCE= 700V; VBE= -1.5V

VCE= 400V; VBE= -1.5V;TC=125℃

VCE= 500V; IB= 0

IEBO

Emitter Cutoff Current

VEB= 6V; IC=0

hFE-1

DC Current Gain

IC= 1A ; VCE= 5V

hFE-2

DC Current Gain

IC= 2.5A ; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 20V; ftest=1.0MHz

Switching times

ton

Turn-On Time

toff

Turn-Off Time

IC= 1A, IB1= 0.1A; IB2= -0.5A,

VBE(off)= -6V;RL= 125Ω

2N5157

MIN MAX UNIT

500

V

500

V

0.8

V

2.5

V

2.0

V

0.5

0.5

mA

0.25 mA

5

mA

30

90

10

150 pF

0.8 μs

1.7 μs

SPTECH website：www.superic-tech.com

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