2N3715 Ver la hoja de datos (PDF) - M/A-COM Technology Solutions, Inc.

Número de pieza

componentes Descripción

Fabricante

2N3715

NPN High Power Silicon Transistor

M/A-COM Technology Solutions, Inc. 

2N3715 & 2N3716

NPN High Power Silicon Transistor

Absolute Maximum Ratings

Ratings

Collector - Emitter Voltage

2N3715

2N3716

Collector - Base Voltage

2N3715

2N3716

Emitter - Base Voltage

Base Current

Collector Current

Total Power Dissipation

@ TA = 25°C2

@ TA = 25°C

Operating & Storage Temperature Range

2. Derate linearly @ 28.57 mW / °C for TA = 25 °C

Thermal Characteristics

Characteristics

Thermal Resistance, Junction to Case

Outline Drawing

Symbol

VCEO

VCBO

VEBO

IB

IC

PT

TOP, TSTG

Symbol

RθJC

Value

60 Vdc

80 Vdc

80 Vdc

100 Vdc

7 Vdc

4 Vdc

10 Adc

5W

117 W

-65°C to +200°C

Rev. V1

Max. Value

1.5°C/W

2

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