2N6257 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N6257 Datasheet PDF : 2 Pages
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L/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ucti,U na.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N6257
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-hFE= 15-75@lc = 8A
• Collector-Emitter Saturation Voltage-
:VCE(sat)=1.5V(Max)@lc = 8A
APPLICATIONS
• Designed for linear amplifiers, series pass regulators, and
inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
40
V
VEBO Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
20
A
IB
Base Current
5
A
PC
Collector Power Dissipation@Tc=25°C
150
W
Tj
Junction Temperature
200
•c
Tstg
Storage Temperature
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.17 •c/w
3
I
1[
^>,
2
PIN
1.BAEE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
(— N—| 1 ,I
, 1 rrrJ 3~~c
1
i:
-*JU_D in
kf
*— u —*
~\ V
XC/K~~Xx /
&a ^7n?Qj-—J ^^,
i^l
\ ct
,B
'' I
nun
DIM M!N MAX
A
3900
B 25-30 2B6?
C 7.ao 8.30
D 0.30 1 TO
E
t 40 1 60
g
1092
H
54&
K 11.40 13.50
L 1675 1705
N 1940 1962
Q
40° 420
U 3000 3020
V
430 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished hy N.I Semi-Conductors is believed to be both accurate and reliable at the time of goiim
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify (hut datasheets are current before placing orders.
Quality Semi-Conductors
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