2N5737 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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Fabricante

2N5737

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -200mA ; IB= 0

VcE(sat)-1 Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A

VcE(sat)-2 Collector-Emitter Saturation Voltage IC=-10A;IB=-2.5A

VeE(sat) Base-Emitter Saturation Voltage

lc= -5A; IB= -0.5A

VeE(on) Base-Emitter On Voltage

lc= -4A; VC£= -4V

ICEO

Collector Cutoff Current

VCE= -60V; IB= 0

ICBO

Collector Cutoff Current

VCB= -60V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

hpE-1

DC Current Gain

lc= -5A; VCE= -5V

hpE-2

DC Current Gain

lc=-10A;VCE=-5V

fr

Current-Gain—Bandwidth Product lc=-0.5A;VCE=-10V

2N5737

MIN MAX UNIT

-60

V

-0.5

V

-3.0

V

-1.2

V

-1.5

V

-0.5

mA

-0.1

mA

-0.1

mA

20

80

4

10

MHz

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