2N5737 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

2N5737

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -60V(Min.)

·Low Collector Saturation Voltage-

: VCE(sat)= -0.5V(Max.)@ IC= -5A

·Wide Area of Safe Operation

APPLICATIONS

·Designed for general-purpose power amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-20

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=100℃

TJ

Junction Temperature

-4

A

50

W

150

℃

Tstg

Storage Temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-a Thermal Resistance,Junction to Ambient 0.5 ℃/W

SPTECH website：www.superic-tech.com

2N5737

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