2N6264 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Número de pieza
componentes Descripción
Fabricante
2N6264 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Max.)@ IC= 1A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 150V(Min)
·Wide Area of Safe Operation
APPLICATIONS
·Series and shunt regulators
·High-fidelity amplifiers
·Power switching circuits
·Solenoid drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
170
V
VCEO
Collector-Emitter Voltage
150
V
VCER
Collector-Emitter Voltage RBE= 100Ω
160
V
VCEV
Collector-Emitter Voltage VBE=-1.5V
170
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
4
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
3.5
UNIT
℃/W
SPTECH website：www.superic-tech.com
2N6264
1
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