2N5491 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

2N5491

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 40V(Min)

·Low Saturation Voltage-

: VCE (sat)= 1V(Max)@IC= 2.0A

APPLICATIONS

·Designed for a wide variety of medium-power switching and

amplifier applications , such as series and shunt regulators

and driver and output stages of high-fidelity amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VCBO

Collector-Base Voltage

60

VCEV

Collector-Emitter Voltage

VBE= -1.5V

60

VCER

Collector-Emitter Voltage

RBE= 100Ω

50

VCEO

Collector-Emitter Voltage

40

VEBO

Emitter-Base Voltage

5

IC

Collector Current-Continuous

7

IB

Base Current

3

Collector Power Dissipation

PC

@ Ta=25℃

Collector Power Dissipation

@ TC=25℃

1.8

50

TJ

Junction Temperature

150

Tstg

Storage Temperature Range

-65~150

UNIT

V

V

V

V

V

A

A

W

℃

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance, Junction to Case

2.5 ℃/W

Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W

SPTECH website：www.superic-tech.com

2N5491

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