2N2219A Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N2219A Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Collector Current- IC= 0.8A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min)
APPLICATIONS
·Designed for general-purpose switching and linear
amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
IBM
Base Current-Peak
PC
Collector Power Dissipation@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a Thermal Resistance,Junction to Ambient
2N2219A
VALUE
75
40
6
0.8
0.2
0.8
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
MAX
187.5
UNIT
K/W
SPTECH website：www.superic-tech.com
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