2N4391 Ver la hoja de datos (PDF) - TT Electronics.
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2N4391 Datasheet PDF : 3 Pages
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SILICON SMALL SIGNAL
N-CHANNEL JFET
2N4391
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)GSS
VGS(off)
IDSS(1)
IGSS
Gate – Source
Breakdown Voltage
Gate – Source
Cut-off Voltage
Saturation
Drain Current
Gate Reverse Current
VDS = 0V
VDS = 20V
VDS = 20V
VDS = 0V
IG = 1.0µA
ID = 1.0nA
VGS = 0V
VGS = -20V
TA = 150°C
ID(off)
VDS(on)
RDS(on)
Drain Cut-off Current
Drain – Source
On Voltage
Drain – Source
On Resistance
VDS = 20V
VGS = 0V
VGS = 0
VGS = -12V
TA = 150°C
ID = 12mA
ID = 1.0mA
DYNAMIC CHARACTERISTICS
Symbols Parameters
Ciss
Common – Source
Input Capacitance
Crss
Common – Source Reverse
Transfer Capacitance
RDS(on)
Drain – Source
On Resistance
tr
td(on)
tf
td(off)
Rise Time
Turn-on Delay Time
Fall Time
Turn-off Delay Time
(1) Pulse Width ≤ 380us, δ ≤ 2%
Test Conditions
VDS = 20V
f = 1.0MHz
VDS = 0V
f = 1.0MHz
VGS = 0V
VGS = -12V
VGS = 0
f = 1.0KHz
ID = 0A
VDD = 10V
VGS = 0V
VGSX = -12V
ID(on) = 12mA
Min. Typ. Max. Units
-40
V
-4
-10
50
150
mA
-100
pA
-200
nA
100
pA
200
nA
0.4
V
30
Ω
Min. Typ. Max. Units
26
pF
5
30
Ω
5
15
ns
15
20
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document No. 10131
Issue 1
Page 2 of 3
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