Electrical Characteristics (Ta=25°C)
TTK101MFV
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Drain current
IDSS VDS = 2 V, VGS = 0
A 140 ⎯ 240
µA
B 210 ⎯ 350
Drain current
ID
VDD = 2 V, RL= 2.2kΩ,Cg = 5pF
A 125 ⎯ 260
µA
B 190 ⎯ 370
Gate-source cut-off voltage VGS(OFF) VDS = 2 V, ID = 1μA
Forward transfer admittance |Yfs| VDS = 2 V, VGS = 0V
-0.1 ⎯ -1.0 V
0.65 0.9 ⎯ mS
Gate-drain breakdown
voltage
V(BR)GDO IG = -100 μA
-20
⎯
⎯
V
Input capacitance
Voltage gain
Ciss VDS = 2 V, VGS = 0, f = 1 MHz
Gv VDD = 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz,vin=100mV
⎯
1.8
⎯
pF
A -2.7 -1.3 ⎯
dB
B -1.8 -0.6 ⎯
Delta voltage gain
Delta voltage gain
DGv(f) VDD = 2V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz to 100Hz,vin=100mV ⎯
0
-1.0 dB
DGv(V)
VDD = 2 V to 1.5 V, RL = 2.2 kΩ, Cg = 5pF,f = 1kHz,
vin=100mV
A ⎯ -0.7 -1.4
dB
B ⎯ -1.4 -3.0
Noise voltage
Total harmonic distortion
VN VDD = 2 V, RL = 1 kΩ, Cg = 10 pF, Gv = 80 dB, A-Curve Filter ⎯
15
30 mV
A ⎯ 1.1 ⎯
THD VDD = 2 V, RL = 2.2kΩ, Cg = 5 pF, f = 1kHz, vin = 50mV
%
B ⎯ 0.6 ⎯
Time output stability
tos VDD = 2 V, RL = 2.2 kΩ, Cg = 5 pF
⎯
20
50
ms
Time Output Stability Test Method
a) TEST CIRCUIT
b) TEST SIGNAL
VDD = 2.0V
Vout
VDD
2V
0V
Vout
VDD-ID*RL
0V
50%
90%
tos
2
2014-03-01