TSUS5400 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

TSUS5400

Infrared Emitting Diode, 950 nm, GaAs

Vishay Semiconductors 

www.vishay.com

1.25

1.0

0.75

0.5

0.25

0

900

94 7994

IF = 100 mA

950

λ - Wavelength (nm)

1000

Fig. 9 - Relative Radiant Power vs. Wavelength

PACKAGE DIMENSIONS in millimeters

A

C

TSUS5400, TSUS5401, TSUS5402

Vishay Semiconductors

0° 10° 20°

30°

40°

1.0

0.9

50°

0.8

60°

0.7

70°

80°

0.6 0.4 0.2

94 7999

0 0.2

0.4 0.6

Fig. 10 - Relative Radiant Intensity vs. Angular Displacement

R 2.49 (sphere)

1.1 ± 0.25

0.5

+ 0.15

- 0.05

6.544-5258.01-4

Issue: 5; 19.05.09

96 12119

2.54 nom.

Area not plane

Ø 5 ± 0.15

0.5

+ 0.15

- 0.05

technical drawings

according to DIN

specifications

Rev. 1.8, 24-Aug-11

4

Document Number: 81056

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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