TSUS5401(1999) Ver la hoja de datos (PDF) - Vishay Semiconductors
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TSUS5401 Datasheet PDF : 6 Pages
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TSUS540.
Vishay Telefunken
¾ GaAs Infrared Emitting Diodes in ø 5 mm (T–1 )
Package
Description
94 8390
TSUS540. series are infrared emitting diodes in stan-
dard GaAs on GaAs technology, molded in a clear,
blue–grey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and photo-
transistors.
Features
D Low cost emitter
D Low forward voltage
D High radiant power and radiant intensity
D Suitable for DC and high pulse current operation
D Standard T–1¾ (ø 5 mm) package
D Comfortable angle of half intensity ϕ = ± 22°
D Peak wavelength lp = 950 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation
angle requirements in combination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
tp/T = 0.5, tp = 100 ms
tp = 100 ms
xt 5sec, 2 mm from case
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
5
V
150
mA
300
mA
2.5
A
210
mW
100
°C
–55...+100 °C
–55...+100 °C
260
°C
375
K/W
Document Number 81056
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
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