TSUS5200(2007) Ver la hoja de datos (PDF) - Vishay Semiconductors
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TSUS5200 Datasheet PDF : 7 Pages
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Infrared Emitting Diode, 950 nm, GaAs
TSUS520.
Vishay Semiconductors
Description
TSUS520. series are infrared emitting diodes in stan-
dard GaAs on GaAs technology, molded in a clear,
blue-grey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and pho-
totransistors.
94 8389
Features
• Low cost emitter
• Low forward voltage
• High radiant power and radiant intensity e2
• Suitable for DC and high pulse current
operation
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = ± 15°
• Peak wavelength λp = 950 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Infrared remote control and free air transmission
systems with low forward voltage and low cost
requirements in combination with PIN photodiodes
or phototransistors.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
5
V
Forward current
IF
150
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
300
mA
Surge forward current
tp = 100 µs
IFSM
2.5
A
Power dissipation
PV
210
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 55 to + 100
°C
Storage temperature range
Tstg
- 55 to + 100
°C
Soldering temperature
t ≤ 5 sec, 2 mm from case
Tsd
260
°C
Thermal resistance junction/
ambient
RthJA
375
K/W
Document Number 81055
Rev. 2.0, 23-Feb-07
www.vishay.com
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