TSML1000(2005) Ver la hoja de datos (PDF) - Vishay Semiconductors

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TSML1000
(Rev.:2005)

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

Vishay Semiconductors 

TSML1000 / 1020 / 1030 / 1040

Vishay Semiconductors

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

Description

TSML1000 series are high efficiency infrared emitting

diodes in GaAlAs on GaAs technology molded in

clear SMD package.

This technology represents best performance for radi-

ant power under pulse conditions, forward voltage

and reliability.

TSML1000

TSML1020

TSML1030

TSML1040

Features

• Outstanding high radiant power

16852

• Low forward voltage

• Suitable for high pulse current operation

• Angle of half intensity ϕ = ± 12°

• Peak wavelength λp = 950 nm

• High reliability

• Matched Phototransistor series: TEMT1000

• Versatile terminal configurations

• Lead-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

For remote control

Photointerrupters

Punched tape readers

Encoder

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Reverse Voltage

Forward current

Peak Forward Current

Surge Forward Current

Power Dissipation

tp/T = 0.5, tp = 100 µs

tp = 100 µs

Junction Temperature

Operating Temperature Range

Storage Temperature Range

Soldering Temperature

t ≤ 5 sec

Thermal Resistance Junction/

Ambient

Basic Characteristics

Tamb = 25 °C, unless otherwise specified

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Forward Voltage

IF = 20 mA, tp = 20 ms

IF = 1 A, tp = 100 µs

Temp. Coefficient of VF

IF = 1 mA

Document Number 81033

Rev. 1.8, 08-Mar-05

Symbol

Value

Unit

VR

5

V

IF

100

mA

IFM

200

mA

IFSM

1.0

A

PV

190

mW

Tj

100

°C

Tamb

- 40 to + 85

°C

Tstg

- 40 to + 100

°C

Tsd

<260

°C

RthJA

400

°C

Symbol

Min

VF

VF

TKVF

Typ.

1.2

2.6

- 1.85

Max

Unit

1.5

V

V

mV/K

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