TSML1000(2005) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
TSML1000 Datasheet PDF : 10 Pages
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TSML1000 / 1020 / 1030 / 1040
Vishay Semiconductors
Parameter
Reverse Current
Junction capacitance
Radiant Intensity
Radiant Power
Temp. Coefficient of φe
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of λp
Rise Time
Fall Time
Virtual Source Diameter
Test condition
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 20 mA, tp = 20 ms
IF = 100 mA, tp = 20 ms
IF = 20 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
Symbol
Min
IR
Cj
Ie
3
φe
TKφe
ϕ
λp
∆λ
TKλp
tr
tf
∅
Typ.
25
7
35
- 0.6
±12
950
50
0.2
800
800
1.2
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
VISHAY
Max
Unit
10
µA
pF
15
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
mm
200
180
160
140
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100
16187
Tamb - Ambient Temperature ( ° C )
Figure 1. Power Dissipation vs. Ambient Temperature
10000
1000
100
0.1
0.05 0.02
tp / T = 0.01
0.2
0.5
1.0
10
0.01
14335
0.10
1.00 10.00 100.00
t p - Pulse Duration ( ms )
Figure 3. Pulse Forward Current vs. Pulse Duration
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100
16188
Tamb - Ambient Temperature ( ° C )
Figure 2. Forward Current vs. Ambient Temperature
10 4
10 3
10 2
t p = 100 µs
tp/ T = 0.001
10 1
10 0
0
1
2
3
4
13600
VF - Forward Voltage ( V )
Figure 4. Forward Current vs. Forward Voltage
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2
Document Number 81033
Rev. 1.8, 08-Mar-05
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