SFH213FA Ver la hoja de datos (PDF) - OSRAM GmbH

Número de pieza

componentes Descripción

Fabricante

SFH213FA

Silicon PIN Photodiode

OSRAM GmbH 

Version 1.3

Maximum Ratings (TA = 25 °C)

Parameter

Operating and storage temperature range

Reverse voltage

Reverse voltage

(t < 2 min)

Total Power dissipation

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

Characteristics (TA = 25 °C)

Parameter

Photocurrent

(VR = 5 V, λ = 870 nm, Ee = 1 mW/cm2)

Wavelength of max. sensitivity

Spectral range of sensitivity

Radiant sensitive area

Dimensions of radiant sensitive area

Half angle

Dark current

(VR = 20 V)

Spectral sensitivity of the chip

(λ = 870 nm)

Quantum yield of the chip

(λ = 870 nm)

Open-circuit voltage

(Ee = 0.5 mW/cm2, λ = 870 nm)

Short-circuit current

(Ee = 0.5 mW/cm2, λ = 870 nm)

Rise and fall time

(VR = 20 V, RL = 50 Ω, λ = 850 nm)

Forward voltage

(IF = 100 mA, E = 0)

Capacitance

(VR = 0 V, f = 1 MHz, E = 0)

Temperature coefficient of VO

SFH 213 FA

Symbol

Top; Tstg

VR

VR

Ptot

VESD

Values

-40 ... 100

20

50

150

2000

Unit

°C

V

V

mW

V

Symbol

(typ (min)) IP

(typ)

(typ)

λS max

λ10%

(typ)

(typ)

A

LxW

(typ)

ϕ

(typ (max)) IR

(typ)

Sλ typ

(typ)

η

(typ (min)) VO

(typ)

ISC

(typ)

tr, tf

(typ)

VF

(typ)

C0

(typ)

TCV

Values

90 (≥ 65)

Unit

µA

900

(typ) 750

... 1100

1.00

1x1

± 10

1 (≤ 5)

nm

nm

mm2

mm x

mm

°

nA

0.65

A/W

0.93

380 (≥ 300)

Electro

ns

/Photon

mV

42

µA

0.005

µs

1.3

V

11

pF

-2.6

mV / K

2015-12-23

2

Share Link: