DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SCA-7 Ver la hoja de datos (PDF) - Sirenza Microdevices => RFMD

Número de pieza
componentes Descripción
Fabricante
SCA-7
Sirenza
Sirenza Microdevices => RFMD Sirenza
SCA-7 Datasheet PDF : 3 Pages
1 2 3
Product Description
Sirenza Microdevices’ SCA-7 is a high performance Gallium
Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration is utilized for broadband performance
up to 3 GHz. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions.
Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. Typical IP3
at 40mA is +24dBm.
These unconditionally stable amplifiers provides 21dB of gain
and +12dBm of 1dB compressed power and requires only a
single positive voltage supply. Only 2 DC-blocking capaci-
tors, a bias resistor and an optional inductor are needed for
operation.
Output IP3 vs. Frequency
30
28
26
dBm
24
22
20
0.1
1
2
3
GHz
SCA-7
DC-3 GHz, Cascadable
GaAs HBT MMIC Amplifier
Product Features
• High Output IP3 : +24dBm
• High Gain : Up to 21dB
• Cascadable 50 Ohm : 1.5:1 VSWR
• Patented GaAs HBT Technology
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
GP
Small Signal Power Gain
dB
850 MHz
19.4 21.5 23.7
dB
1950 MHz
20.5
dB
2400 MHz
20.0
GF
P1dB
OIP3
NF
Gain Flatness
Output Power at 1dB Compression
Output Third Order Intercept Point
Noise Figure
dB
dBm
dBm
dB
0.1-2.0 GHz
1950 MHz
1950 MHz
1950 MHz
+/- 1.2
12.0
24.0
3.8
VSWR Input / Output
-
0.1-3.0 GHz
1.8:1
ISOL Reverse Isolation
dB
0.1-3.0 GHz
22
VD
ID
dG/dT
Device Operating Voltage
Device Operating Current
Device Gain Temperature Coefficient
V
mA
dB/°C
3.3
3.7
4.1
35
40
45
-0.0015
RTH, j-l Thermal Resistance (junction to lead)
°C/W
340
Test Conditions:
VS = 8 V
RBIAS = 110 Ohms
ID = 40 mA Typ.
TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-102422 Rev A

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]