EMB3 Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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EMB3

Digital Transistors (Built-in Resistors)

Jiangsu Changjiang Electronics Technology Co., Ltd 

JC(T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

EMB3 Dual Digital Transistors (PNP+PNP)

FEATURES

z Two DTA143T chips in a package

z Transistor elements are independent, eliminating interference

z Mounting cost and area can be cut in half

SOT-563

MARKING: B3

Absolute maximum ratings(Ta=25℃)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector Power dissipation

Junction temperature

Storage temperature

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

IC

PC

Tj

Tstg

Limits

-50

-50

-5

-100

150

150

-55~150

Electrical characteristics (Ta=25℃)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

DC current transfer ratio

Input resistance

Transition frequency

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

VCE(sat)

hFE

R1

fT

Min.

-50

-50

-5

100

3.29

Unit

V

V

V

mA

mW

℃

℃

Typ Max. Unit

Conditions

V IC=-50μA

V IC=-1mA

V IE=-50μA

-0.5 μA VCB=-50V

-0.5 μA VEB=-4V

-0.3

V IC=-5mA,IB=-2.5mA

600

VCE=-5V,IC=-1mA

4.7

6.11 KΩ

250

 MHz VCE=10V ,IE=-5mA,f=100MHz

www.cj-elec.com

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CA,JMuany,2,2001145

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