MMBT3904TT1 Ver la hoja de datos (PDF) - Willas Electronic Corp.
Número de pieza
componentes Descripción
Fabricante
MMBT3904TT1 Datasheet PDF : 7 Pages
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WILLAS
FM120-M+
MMBT3904TTT1HRU
1.0AGSUeRnFAeCrEaMlOPUNuTrSpCHoOsTTeKYTBrAaRnRIsERisREtoCTrIFsIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
1•.0High current capability, low forward voltage drop.
• High surge capability.
0•.8
•
Guardring for overvoltage p
I C = 1.0 mA
Ultra high-speed switching.
ro
t
ection.
10
mA
• Silicon epitaxial planar chip, metal silicon junction.
0.6
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0•.4RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.2
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
30 mA
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
T J = 25°C
100 mA
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
•0Case : Molded plastic, SOD-123H
• T0e.0r1minals :0P.0l2ated0t.e03rmina0l.s0,5 so0l.d0e7 rab0l.1e per MIL-0S.2TD-705.30,
0.031(0.8) Typ.
0.5 0.7 1.0
2.0
3.0
0.031(0.8) Typ.
5.0 7.0 10
Method 2026
I B , BASE CURRENT (mA)
• Polarity : Indicated by cathode bandFigure 16. Collector Saturation Region Dimensions in inches and (millimeters)
• Mounting Position : Any
1•.2 Weight : Approximated 0.011 gram
1.0
T J = 25°C
1.0
MAXIMUM RATINGSV AND@ BE(sat) IEC /LI BE=1C0TRICAL CHAR0A.5CTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single0p.8hase half wave, 60Hz, resistive of inductive load.
0
θ VC FOR V CE(sat)
For capacitive load, derate current by 20% V BE @ V CE =1.0 V
+25°C TO +125°C
–55°C TO +25°C
0.6
RATINGS
–0.5
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
0.4
Maximum Recurrent Peak Reverse VolVtaCgE(esat) @ I C /I B =10 VRRM
20
Maximu0m.2 RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
13–1.0
30
21–1.5
30
14
15
16
40
50
60
28 θ VB F3O5R V BE(sat) 42
40
50
60
18 +25°C T1O0+125°C 115
120
80
100
150
200
–55°C TO +25°C
56
70
105
140
80
100
150
200
Maximum0 Average Forward Rectified Current
1.0
2.0 3.0 5.0
10
20
IO
50
100
200
–2.0
0
20 40
1.0
60 80 100 120 140 160 180 200
Peak Forward
superimposed
SonurrgaeteCdIulorCrae,dnCt(OJ8E.L3DLmEECsCsmTinOegtlRheohdCa)Ulf RsiRneE-wNaTve(mAI)FSM
Typical Thermal ResistaFncigeu(Nreote172.) “ON” Voltages RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
-55 to +125
I C , COLLECTO3R0 CURRENT (mA)
Figure 18. Tempe4r0ature Coefficients
120
-55 to +150
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-112012-06
WILLASWEILLLEACSTERLOENCITCRCOONRICPC. ORP
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