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AOB414

N-Channel Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

Rev 2: Nov. 2004

AOB414, AOB414L ( Green Product )

N-Channel Enhancement Mode Field Effect Transistor

General Description

The AOB414 uses advanced trench technology to

provide excellent RDS(ON), shoot-through immunity

and body diode characteristics. This device is ideally

suited for use as a low side switch in CPU core

power conversion. AOB414L ( Green Product ) is

offered in a lead-free package.

Features

VDS (V) = 30V

ID = 110A

RDS(ON) < 4.2mΩ (VGS = 10V)

RDS(ON) < 4.8mΩ (VGS = 4.5V)

TO-263

D2-PAK

D

Top View

Drain Connected

to Tab

G

S

GD S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain

TC=25°C G

Current B,G

TC=100°C B

ID

Pulsed Drain Current

IDM

Avalanche Current C

IAR

Repetitive avalanche energy L=0.1mH C

EAR

TC=25°C

Power Dissipation B TC=100°C

PD

TA=25°C

Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range TJ, TSTG

Maximum

30

±12

110

80

200

30

140

100

50

3.1

2

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

8.1

33

12

40

Maximum Junction-to-Lead C

Steady-State

RθJL

0.84

1.5

Alpha & Omega Semiconductor, Ltd.

Units

V

V

A

A

mJ

W

W

°C

Units

°C/W

°C/W

°C/W

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