UT2316G(2009) Ver la hoja de datos (PDF) - Unisonic Technologies

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UT2316G
(Rev.:2009)

N-CHANNEL ENHANCEMENT MODE

Unisonic Technologies 

UT2316

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current (Note 3)

ID

3.6

A

Pulsed Drain Current (Note 1, 2)

Total Power Dissipation (Ta=25℃)

Junction Temperature

Storage Temperature

IDM

16

A

PD

0.96

W

TJ

+150

℃

TSTG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL DATA

PARAMETER

Junction to Ambient (Note 3)

SYMBOL MIN

θJA

TYP

„ ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)

MAX

175

UNIT

℃ /W

PARAMETER

SYMBOL

TEST CONDITIONS MIN

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BVDSS VGS=0V, ID=250μA

30

IDSS

VDS=24V, VGS=0V

Gate-Source Leakage Current

ON CHARACTERISTICS

IGSS

VDS=0V, VGS=±20V

Gate Threshold Voltage

VGS(TH) VDS=VGS, ID=250μA

0.8

On-State Drain Current

ID(ON)

VDS = 4.5V, VGS = 10V

VDS = 4.5V, VGS = 4.5V

6

4

Drain-Source On-State Resistance (Note 2)

RDS(ON)

VGS=10V, ID=3.4A

VGS=4.5V, ID=2.6A

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

CISS

COSS

VDS=15V,VGS=0V, f=1.0MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

CRSS

Turn-ON Delay Time

Turn-ON Rise Time

Turn-OFF Delay Time

Turn-OFF Fall Time

tD(ON)

tR

tD(OFF)

tF

VDD=15V, VGS=10V, ID≒1A,

RG=6Ω, RL=15Ω

Total Gate Charge

Gate-Source Charge

QG

QGS

VDS=15V, VGS=10V, ID=3.6A

Gate-Drain Charge

QGD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

VSD

VGS=0V, IS=0.8A

Maximum Continuous Drain-Source Diode

Forward Current

IS

VD=VG=0V, VS=1.2V

Notes: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300us, duty cycle ≤2%.

3. Surface mounted on 1 in2 copper pad of FR4 board

TYP

42

68

215

90

55

9

9

14

6

4.3

0.65

1.2

0.88

0.8

MAX UNITS

V

1 μA

±100 nA

V

A

A

50 mΩ

85 mΩ

pF

pF

pF

15 ns

15 ns

20 ns

12 ns

7 nC

nC

nC

1.2 V

A

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-126.B

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