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THDT6511D Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción
Fabricante
THDT6511D Datasheet PDF : 6 Pages
1 2 3 4 5 6
THDT6511D
DYNAMIC CHARACTERISTICS : VFP and VBO
Figure 1 :
60
250 ns
10
10 us
5
10 ms
2
t
-85
) -100
t(s -130
1 us
200 ns
Produc Under lightning and power crossing test, the device limits the transient voltage to the values
te indicated in the figure
le LSSGR TEST DIAGRAM
o Figure 2 :
Obsolete Product(s) - Obs THDT6511D
To stand the LSSGR test requirements, Rp must be 15
4/6

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