THDT6511D Ver la hoja de datos (PDF) - STMicroelectronics
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THDT6511D Datasheet PDF : 6 Pages
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THDT6511D
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
Value
Unit
IPP
Peak pulse current (see note 1)
10/1000µs
40
A
5/310µs
50
2/10µs
125
ITSM Non repetitive surge peak on-state current
F = 50 Hz
t = 300 ms
10
A
t=1s
3.5
t=5s
1
ITSM F = 50 Hz, 60 x 1 s, 2 mn between pulse
1
A
Tstg
Storage temperature range
Tj
Maximum junction temperature
- 55 to + 150 °C
150
TL
Maximum lead temperature for soldering during 10s
260
°C
Note 1 : Pulse waveform :
) 10/1000µs
t(s 5/310µs
c 2/10µs
tr=10µs
tr=5µs
tr=2µs
tp=1000µs
tp=310µs
tp=10µs
te Produ THERMAL RESISTANCES
ole Symbol
bs Rth (j-a) Junction to ambient
Parameter
- O ELECTRICAL CHARACTERISTICS
t(s) (Tamb = 25°C)
c Symbol
du VRM
ro IRM
P VBR
te VBO
le IH
soVF
ObVFP
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakover voltage
Holding current
Forward voltage drop
Peak forward voltage
% I PP
100
50
0
tr
tp
t
Value
170
Unit
°C/W
I
IF
VBO
VBR
VRM
VF
V
IRM
IH
IBO
Breakover current
IBO
IPP
Peak pulse current
C
Capacitance
αT
Temperature coefficient
Ipp
2/6
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