SUP70N06 Ver la hoja de datos (PDF) - Temic Semiconductors
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SUP70N06 Datasheet PDF : 4 Pages
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SUP/SUB70N06-14
Typical Characteristics (25_C Unless Otherwise Noted)
On-Resistance vs. Junction Temperature
2.5
Source-Drain Diode Forward Voltage
100
VGS = 10 V
ID = 30 A
2.0
TC = 150_C
1.5
TC = 25_C
10
1.0
0.5
0
–50 –25 0 25 50 75 100 125 150 175
TJ – Junction Temperature (_C)
Thermal Ratings
Maximum Avalanche and Drain Current
vs. Case Temperature
100
1
0.25
0.50
0.75
1.00
1.25
1.50
VSD – Source-to-Drain Voltage (V)
Safe Operating Area
500
80
100
Limited
60
by rDS(on)
10
40
1
20
TC = 25_C
Single Pulse
0
0
2
0.1
25 50 75 100 125 150 175
0.1
1
10
TC – Case Temperature (_C)
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Duty Cycle = 0.5
100 ms
1 ms
10 ms
100 ms,
1 s, dc
100
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–5
10–4
4
10–3
10–2
Square Wave Pulse Duration (sec)
10–1
1
3
Siliconix
S-47973—Rev. B, 08-Jul-96
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