SUP70N06 Ver la hoja de datos (PDF) - Temic Semiconductors
Número de pieza
componentes Descripción
Fabricante
SUP70N06 Datasheet PDF : 4 Pages
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SUP/SUB70N06-14
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, IDS = 1 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125_C
VDS = 60 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 10 V, ID = 30 A, TJ = 175_C
VDS = 15 V, ID = 30 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 30 V, VGS = 10 V, ID = 60 A
VDD = 30 V, RL = 0.47 W
ID ] 60 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)a
Continuous Current
Pulsed Current
Forward Voltageb
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
IF = 70 A, VGS = 0 V
IF = 60 A, di/dt = 100 A/ms
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typ Max Unit
60
V
2.0
3.0
4.0
"100 nA
1
50
mA
150
70
A
0.014
0.023 W
0.028
25
50
S
2400
490
pF
130
45
70
12
nC
16
13
30
11
30
ns
30
60
11
25
70
A
160
1.4
V
47
ns
3.5
A
0.08
mC
2
Siliconix
S-47973—Rev. B, 08-Jul-96
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