SUP70N06 Ver la hoja de datos (PDF) - Temic Semiconductors
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SUP70N06 Datasheet PDF : 4 Pages
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SUP/SUB70N06-14
N-Channel Enhancement-Mode Transistors
Product Summary
V(BR)DSS (V)
60
rDS(on) (W)
0.014
ID (A)
70a
TO-220AB
D
TO-263
G
DRAIN connected to TAB
GD S
Top View
SUP70N06-14
G DS
Top View
SUB70N06-14
S
N-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Parameter
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
TC = 25_C
TC = 100_C
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Symbol
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
Limit
"20
70a
49
160
70
180
142c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount (TO-263)d
40
RthJA
Free Air (TO-220AB)
62.5
_C/W
Junction-to-Case
RthJC
1.05
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document # 70291.
A SPICE Model data sheet is available for this product (FaxBack document #70541).
Siliconix
1
S-47973—Rev. B, 08-Jul-96
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