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SST30VR041 Datasheet PDF : 10 Pages
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4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo
SST30VR041 / SST30VR043
Preliminary Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20°C to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Voltage on Any Pin Relative to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD + 0.5V
Voltage on VDD Supply Relative to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 4.0V
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Soldering Temperature (10 Seconds Lead Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
OPERATING RANGE
Range
Commercial
Extended
Ambient Temp
0°C to +70°C
-20°C to +85°C
VDD
2.7-3.3V
2.7-3.3V
AC CONDITIONS OF TEST
Input Pulse Level . . . . . . . . . . . . . . . . . . . . 0-VDD
Input & Output Timing Reference Levels . . . VDD/2
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . . CL = 30 pF for 70 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . . CL = 100 pF for 150 ns
TABLE 2: RECOMMENDED DC OPERATING CONDITIONS
Symbol
Parameter
Min
VDD
Supply Voltage
2.7
VSS
Ground
0
VIH
Input High Voltage
2.4
VIL
Input Low Voltage
-0.3
Max
3.3
0
VDD + 0.5
0.3
Units
V
V
V
V
T2.0 381
TABLE 3: DC OPERATING CHARACTERISTICS
Symbol Parameter
IDD1
ROM Operating Supply Current
VDD = 3.0±0.3V
Min
Max
Units
4.0+1.1(f)1 mA
IDD2
RAM Operating Supply Current
ISB
Standby VDD Current
2.5+1(f)1 mA
10
µA
ILI
Input Leakage Current
ILO
Output Leakage Current
-1
1
µA
-1
1
µA
VOL
Output Low Voltage
VOH
Output High Voltage
0.4
V
2.2
V
1. f = Frequency of operation (MHz) = 1/cycle time
Test Conditions
ROMCS# = VIL, RAMCS# = VIH,
VIN = VIH or VIL, II/O = Opens
ROMCS# = VIH, RAMCS# = VIL, II/O = Opens
ROMCS# ≥ VDD-0.2V, RAMCS# ≥ VDD-0.2V
VIN ≥ VDD-0.2V or VIN ≤ 0.2V
VIN = VSS to VDD
ROMCS# = RAMCS# = VIH or OE# = VIH or
WE# = VIL, VI/O = VSS to VDD
IOL = 1.0 mA
IOH = -0.5 mA
T3.4 381
©2001 Silicon Storage Technology, Inc.
3
S71134-02-000 4/01 381
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