74LVC541ADTR2G(2015_Rev0) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
74LVC541ADTR2G Datasheet PDF : 9 Pages
| |||
74LVC541A
AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns)
−405C to +855C
−405C to +1255C
Symbol
Parameter
Conditions
Min Typ1 Max Min Typ1 Max Unit
tpd
Propagation Delay (Note 6)
nAn to nYn
VCC = 1.2 V
− 14.0 −
−
−
−
ns
VCC = 1.65 V to 1.95 V 1.5 6.5 13.8 1.5
− 16.0
VCC = 2.3 V to 2.7 V
1.0 3.5 6.8 1.0
−
7.9
VCC = 2.7 V
1.5 3.5 5.6 1.5
−
7.0
VCC = 3.0 V to 3.6 V
1.0 2.9 5.1 1.0
−
6.5
ten
Enable Time (Note 7)
nOE to nYn
VCC = 1.2 V
− 20.0 −
−
−
−
ns
VCC = 1.65 V to 1.95 V 1.8 7.7 16.0 1.8
− 18.5
VCC = 2.3 V to 2.7 V
1.5 4.3 8.8 1.5
− 10.2
VCC = 2.7 V
1.5 4.4 7.5 1.5
−
9.5
VCC = 3.0 V to 3.6 V
1.0 3.5 7.0 1.0
−
9.0
tdis
Disable Time (Note 8)
nOE to nYn
VCC = 1.2 V
− 11.0 −
−
−
−
ns
VCC = 1.65 V to 1.95 V 3.0 4.9 10.3 3.0
− 11.9
VCC = 2.3 V to 2.7 V
1.0 2.7 5.9 1.0
−
6.8
VCC = 2.7 V
1.5 3.7 7.0 1.5
−
9.0
VCC = 3.0 V to 3.6 V
1.0 3.3 6.0 1.0
−
7.5
tsk(0) Output Skew Time (Note 9)
−
−
1
−
−
1.5
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Typical values are measured at TA = 25°C and VCC = 3.3 V, unless stated otherwise.
6. tpd is the same as tPLH and tPHL.
7. ten is the same as tPZL and tPZH.
8. tdis is the same as tPLZ and tPHZ.
9. Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design.
DYNAMIC SWITCHING CHARACTERISTICS
Symbol
Characteristic
Condition
TA = +25°C
Min Typ Max Unit
VOLP Dynamic LOW Peak Voltage (Note 10) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
0.8
V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V
0.6
VOLV Dynamic LOW Valley Voltage (Note
VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
−0.8
V
10)
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V
−0.6
10. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is
measured in the LOW state.
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
Typical
Unit
CIN Input Capacitance
VCC = 3.3 V, VI = 0 V or VCC
4.0
pF
COUT Output Capacitance
VCC = 3.3 V, VI = 0 V or VCC
5.0
pF
CPD
Power Dissipation Capacitance
(Note 11)
Per input; VI = GND or VCC
pF
VCC = 1.65 V to 1.95 V
7.7
VCC = 2.3 V to 2.7 V
11.3
VCC = 3.0 V to 3.6 V
14.4
11. CPD is used to determine the dynamic power dissipation (PD in mW).
PD = CPD * VCC2 x fi * N + S (CL x VCC2 x fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF VCC = supply voltage in Volts
N = number of outputs switching
S(CL * VCC2 x fo) = sum of the outputs.
www.onsemi.com
5
Share Link: 