SDR644CTS1TX Ver la hoja de datos (PDF) - Solid State Devices, Inc.
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SDR644CTS1TX Datasheet PDF : 2 Pages
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
SDR64 ___ CT ___ ___
│
│└
Screening 2/
│
│
__ = Not Screened
│
│
│
│
TX = TX Level
TXV = TXV
S = S Level
│
└ Package
│
S1= SMD1
└ Voltage/Family
3 = 300 V
4 = 400 V
5 = 500 V
6 = 600 V
7 = 700 V
SDR643CTS1
thru
SDR647CTS1
50 AMP
300-700 Volts
35 nsec
Ultra Fast
Centertap Rectifier
Features:
• Ultra Fast Recovery: 25 nsec typical
• High Surge Rating
• Low Reverse Leakage Current
• Low Junction Capacitance
• Hermetically Sealed Power Surface Mount Package
• Ceramic Seals Available
• Higher Currents & Voltages Available – Contact Factory
• TX, TXV, and S-Level Screening Available2/
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SDR643CTS1
SDR644CTS1
SDR645CTS1
SDR646CTS1
SDR647CTS1
Symbol
VRRM
VRWM
VR
Average Rectified Forward Current note 3
(Resistive Load, 60 Hz Sine Wave, TA = 25ºC)
Peak Surge Current note 3
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, TA = 25ºC)
Operating & Storage Temperature
Io
IFSM
Top & Tstg
Value
300
400
500
600
700
50
500
-65 to +200
Units
Volts
Amps
Amps
ºC
Maximum Thermal Resistance
Junction to Case, each individual diode
Junction to Case, note 3
RθJC
2.00
1.20
ºC/W
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500; contact factory for screening flow.
3/ Both legs tied together
SMD1
*Also available in other packages: TO-254, TO-254Z, TO-257, and 28 Pin CLCC –
Consult Factory
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0087C
DOC
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