RTL020P02FRA Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
RTL020P02FRA Datasheet PDF : 4 Pages
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Transistors
RTLR0T2L00P2002PF0R2A
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −20 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −20V, VGS=0V
Gate threshold voltage
VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA
−
Static drain-source on-state
resistance
∗
RDS (on)
−
−
100 135 mΩ ID= −2A, VGS= −4.5V
110 150 mΩ ID= −2A, VGS= −4V
180 250 mΩ ID= −1A, VGS= −2.5V
Forward transfer admittance
Yfs ∗ 1.2
−
−
S VDS= −10V, ID= −1A
Input capacitance
Ciss
− 430 −
pF VDS= −10V
Output capacitance
Coss
−
80
−
pF VGS=0V
Reverse transfer capacitance Crss
− 55 − pF f=1MHz
Turn-on delay time
td (on) ∗
−
11
−
ns ID= −1A
Rise time
Turn-off delay time
Fall time
tr ∗ −
td (off) ∗
−
13
38
−
−
ns
ns
VDD −15V
VGS= −4.5V
RL=15Ω
tf ∗ −
12
−
ns RG=10Ω
Total gate charge
Qg ∗ −
4.9
−
nC VDD −15V RL=7.5Ω
Gate-source charge
Qgs ∗ −
1.2
−
nC VGS= −4.5V RG=10Ω
Gate-drain charge
Qgd ∗ −
1.3
−
nC ID= −2A
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VSD
−
− −1.2 V IS= −0.8A, VGS=0V
20190527-Rev.C 2/4
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