MCH3475-TL-W Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante

MCH3475-TL-W

Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel

ON Semiconductor 

MCH3475

Power MOSFET

30V, 180mΩ, 1.8A, Single N-Channel

www.onsemi.com

Features

• High Speed Switching

• 4V Drive

• Pb-Free and RoHS Compliance

• Halogen Free Compliance : MCH3475-TL-W

VDSS

30V

RDS(on) Max

180mΩ@ 10V

330mΩ@ 4V

ID Max

1.8A

Specifications

Absolute Maximum Ratings at Ta = 25°C

Parameter

Symbol

Value

Unit

Drain to Source Voltage

VDSS

30

V

Gate to Source Voltage

VGSS

±20

V

Drain Current (DC)

ID

1.8

A

Drain Current (Pulse)

PW≤10μs, duty cycle≤1%

IDP

7.2

A

Power Dissipation

When mounted on ceramic substrate

PD

(900mm2 × 0.8mm)

Junction Temperature

Tj

0.8

W

150

°C

Storage Temperature

Tstg

−55 to +150

°C

This product is designed to “ESD immunity < 200V*”, so please take care when handling.

* Machine Model

Thermal Resistance Ratings

Parameter

Junction to Ambient

When mounted on ceramic substrate

(900mm2 × 0.8mm)

Symbol

RθJA

Value

Unit

156.2

°C/W

Electrical Connection

N-Channel

3

1

1 : Gate

2 : Source

3 : Drain

2

Packing Type : TL

Marking

FG

TL

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2015

1

March 2015 - Rev. 3

Publication Order Number :

MCH3475/D

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