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MCH3481 Datasheet PDF : 5 Pages
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MCH3481
Power MOSFET
20V, 104mΩ, 2A, Single N-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
• Low On-Resistance
• 1.2V drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
Typical Applications
• Load Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
20
V
Gate to Source Voltage
VGSS
±9
V
Drain Current (DC)
ID
2
A
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
8
A
Power Dissipation
When mounted on ceramic substrate
PD
(900mm2 × 0.8mm)
0.8
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2 × 0.8mm)
Symbol
RθJA
Value
Unit
156.2 °C/W
www.onsemi.com
VDSS
20V
RDS(on) Max
104mΩ@ 4.5V
147mΩ@ 2.5V
203mΩ@ 1.8V
540mΩ@ 1.2V
ID Max
2A
ELECTRICAL CONNECTION
N-Channel
PACKING TYPE : TL MARKING
FN
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
June 2015 - Rev. 1
Publication Order Number :
MCH3481/D
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