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MBRF2060CTG Datasheet PDF : 4 Pages
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MBRF2060CTG
Switch-mode
Schottky Power Rectifier
The Switch−mode Power Rectifier employs the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low−voltage, high−frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Matched Dual Die Construction
• High Junction Temperature Capability
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Electrically Isolated. No Isolation Hardware Required.
• These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 60 VOLTS
1
2
3
TO−220 FULLPAK
CASE 221AH
1
2
3
MARKING DIAGRAM
AYWW
B2060G
AKA
A
= Assembly Location
Y
= Year
WW = Work Week
B2060 = Device Code
G
= Pb−Free Package
AKA = Polarity Designator
ORDERING INFORMATION
Device
Package
Shipping
MBRF2060CTG TO−220FP
(Pb−Free)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2016
1
July, 2016 − Rev. 9
Publication Order Number:
MBRF2060CT/D
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