L9333(2000) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

L9333
(Rev.:2000)

QUAD LOW SIDE DRIVER

STMicroelectronics 

L9333

ELECTRICAL CHARACTERISTCS (continued)

Symbol

Parameter

Test Conditio n

Enable EN

VENlow Input voltage LOW

VENhigh Input voltage HIGH

REN Input impedance

-14V < VEN < 1.5V

IEN Input current

1.5V < VEN < 45V

Outputs OUT1- OUT4

RDSon Output ON-resistor

VS > 6V, IO = 0.3A

IOLeak Leakage current

VO = VS = 14V; Ta < 125°C

VO = VS = 14V; Ta < 150°C

VOClamp Output voltage during clamping EFB ≤ 2mJ; 10 mA < IO < 0.3A

IOSC Short-circuit current

VS > 6V

CO internal output capacities

VO > 4.5V

Diagnostic Output DIAG

VDlow Output voltage LOW

IDL = 0.6mA

IDmax Max. output current

internal current limitation; VD =

14V

IDLeak Leakage current

VD = VS = 14 V; Ta < 125 °C

VD = VS = 14 V; Ta < 150 °C

Timing Characteristics 5)

td,on On delay time

VS = 14V

td,off Off delay time

Cext = 0F; Lext = 0H

tset Enable settling time

only testing condition

td,DIAG ON or OFF Diagnostic delay time 10mA ≤ I0 ≤ 200mA

Sout Output voltage slopes

Note : All parameters are measured at 125°C.

5. See also Fig.3 Timi ng Characteristics

Min. Typ. Max. Unit

-14

1

V

2

45

V

5

kΩ

5

80

µA

1.7

3.8

Ω

1

5

µA

25

µA

45

52

60

V

400 700 1000 mA

100

pF

0.8

V

1

5

15

mA

0.1

1

µA

5

µA

2

3.5

µs

3

4.5

µs

20

µs

10

µs

2.5

9

16

V/µs

5/13

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