2SK3568 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

2SK3568

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

2SK3568

·FEATURES

· Drain-source on-resistance:

RDS(on) ≤ 0.52Ω@10V

·Low leakage current:

IDSS <100 µA @VDS = 500 V

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·APPLICATIONS

·Switching Regulator Applications

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VDSS

Drain-Source Voltage

500

VGS

Gate-Source Voltage

±30

ID

Drain Current-Continuous

12

IDM

Drain Current-Single Pulsed

48

PD

Total Dissipation @TC=25℃

40

Tj

Max. Operating Junction Temperature

150

Tstg

Storage Temperature

-55~150

UNIT

V

V

A

A

W

℃

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(ch-c) Channel-to-case thermal resistance

MAX

3.125

UNIT

℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

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