Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
2SJ360 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SJ360
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
Toshiba
2SJ360 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SJ360
500
Single pulse
300
100
50
30
10
5
3
1
1m
10 m
r
th
−
t
w
Single
15
×
15
×
0.8
20
×
30
×
0.8
Mounted on ceramic substrate
40mm
×
50mm
×
0.8mm
100 m
1
10
Pulse width t
w
(s)
100
1000
SAFE OPERATING AREA
−
10
−
5
ID max (pulsed)
*
−
3
1 ms
*
ID max (continuous)
−
1
−
0.5
−
0.3
DC operation
Ta
=
25°C
10 ms
*
−
0.1
−
0.05
−
0.03 *: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
−
0.01 linearly with increase in
temperature.
−
0.005
−
0.1
−
0.3
−
1
−
3
VDSS max
−
10
−
30
−
100
Drain-source voltage VDS (V)
5
2009-09-29
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]